Zakładka z wyszukiwarką danych komponentów |
|
SI3410DV Arkusz danych(PDF) 3 Page - Vishay Siliconix |
|
SI3410DV Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 11 page Document Number: 69254 S09-2110-Rev. B, 12-Oct-09 www.vishay.com 3 Vishay Siliconix Si3410DV TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 VGS = 10 V thru 4 V VDS - Drain-to-Source Voltage (V) VGS = 3 V 0.010 0.014 0.018 0.022 0.026 0.030 0 6 12 18 24 30 ID - Drain Current (A) VGS = 4.5 V VGS = 10 V ID = 5 A 0 2 4 6 8 10 0 5 10 15 20 25 Qg - Total Gate Charge (nC) VDS = 10 V VDS = 20 V VDS = 15 V Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.3 0.6 0.9 1.2 1.5 012345 VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C Crss 0 320 640 960 1280 1600 06 12 18 24 30 Coss Ciss VDS - Drain-to-Source Voltage (V) - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) 0.7 0.9 1.1 1.3 1.5 1.7 VGS = 4.5 V VGS = 10 V ID = 5 A |
Podobny numer części - SI3410DV |
|
Podobny opis - SI3410DV |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |