SI3850ADV datasheet(2/13 Pages) VISHAY

Numer części	SI3850ADV

Szczegółowy opis	Complementary MOSFET Half-Bridge (N- and P-Channel)

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Document Number: 73789

S09-2110-Rev. B, 12-Oct-09

Vishay Siliconix

Si3850ADV

Notes:

a. Guaranteed by design, not subject to production testing.

b. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

N-Ch

0.6

1.5

V

VDS = VGS, ID = - 250 µA

P-Ch

- 0.6

- 1.5

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 20 V, VGS = 0 V

N-Ch

1

µA

VDS = - 20 V, VGS = 0 V

P-Ch

- 1

VDS = 20 V, VGS = 0 V, TJ = 70 °C

N-Ch

10

VDS = - 20 V, VGS = 0 V, TJ = 70 °C

P-Ch

- 10

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 4.5 V

N-Ch

3.0

A

VDS = - 5 V, VGS = - 4.5 V

P-Ch

- 1.5

Drain-Source On-State Resistanceb

RDS(on)

VGS = 4.5 V, ID = 0.5 A

N-Ch

0.240

0.300

Ω

VGS = - 4.5 V, ID = - 0.5 A

P-Ch

0.510

0.640

VGS = 3.0 V, ID = 0.5 A

N-Ch

0.325

0.410

VGS = - 3.0 V, ID = - 0.5 A

P-Ch

0.780

0.980

Forward Transconductanceb

gfs

VDS = 10 V, ID = 1 A

N-Ch

1.8

S

VDS = - 10 V, ID = - 1 A

P-Ch

1.1

Diode Forward Voltageb

VSD

IS = 0.9 A, VGS = 0 V

N-Ch

0.87

1.2

V

IS = - 0.8 A, VGS = 0 V

P-Ch

- 1.0

- 1.3

Dynamicb

Total Gate Charge

Qg

N-Channel

VDS = 10 V, VGS = 4.5 V, ID = 1 A

P-Channel

VDS = - 10 V, VGS = - 4.5 V, ID = - 1 A

N-Ch

0.95

1.4

nC

P-Ch

1.10

1.7

Gate-Source Charge

Qgs

N-Ch

0.22

P-Ch

0.28

Gate-Drain Charge

Qgd

N-Ch

0.24

P-Ch

0.26

Gate Resistance

Rg

N-Ch

3.5

5.3

Ω

P-Ch

10.5

16

Turn-On Delay Time

td(on)

N-Channel

VDD = 10 V, RL = 10 Ω

ID ≅ 0.9 A, VGEN = 4.5 V, Rg = 1 Ω

P-Channel

VDD = - 10 V, RL = 10 Ω

ID ≅ - 0.9 A, VGEN = - 4.5 V, Rg = 1 Ω

N-Ch

8

14

ns

P-Ch

13

20

Rise Time

tr

N-Ch

16

25

P-Ch

34

50

Turn-Off Delay Time

td(off)

N-Ch

20

30

P-Ch

18

30

Fall Time

tf

N-Ch

9

15

P-Ch

18

30

Body Diode Reverse Recovery Tme

trr

IF = 0.9 A, dI/dt = 100 A/µs

N-Ch

20

30

IF = - 0.9 A, dI/dt = 100 A/µs

P-Ch

25

40

Body Diode Reverse Recovery

Charge

Qrr

IF = 0.9 A, dI/dt = 100 A/µs

N-Ch

9

15

nC

IF = - 0.9 A, dI/dt = 100 A/µs

P-Ch

9

15

Podobny numer części - SI3850ADV

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