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SI4288DY-T1-GE3 Arkusz danych(PDF) 5 Page - Vishay Siliconix |
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SI4288DY-T1-GE3 Arkusz danych(HTML) 5 Page - Vishay Siliconix |
5 / 10 page Document Number: 67078 S10-2768-Rev. A, 29-Nov-10 www.vishay.com 5 Vishay Siliconix Si4288DY TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 4 6 8 10 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power Derating, Junction-to-Foot 0.0 0.8 1.6 2.4 3.2 4.0 0 25 50 75 100 125 150 T C - Case Temperature (°C) Power Derating, Junction-to-Ambient 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 T A - Ambient Temperature (°C) |
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