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SI4618DY Arkusz danych(PDF) 1 Page - Vishay Siliconix

Numer części SI4618DY
Szczegółowy opis  Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
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Producent  VISHAY [Vishay Siliconix]
Strona internetowa  http://www.vishay.com
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Vishay Siliconix
Si4618DY
Document Number: 74450
S09-2109-Rev. B, 12-Oct-09
www.vishay.com
1
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
a
Qg (Typ.)
Channel-1
30
0.017 at VGS = 10 V
8.0
12.5
0.0195 at VGS = 4.5 V
7.5
Channel-2
30
0.010 at VGS = 10 V
15.2
17
0.0115 at VGS = 4.5 V
14.1
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V)
Diode Forward Voltage
IF (A)
a
30
0.43 V at 1.0 A
3.8
G1
D1
S2
S1/D2
S2
S1/D2
G2
S1/D2
SO-8
5
6
7
8
Top View
2
3
4
1
Ordering Information: Si4618DY-T1-E3 (Lead (Pb)-free)
Si4618DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1
G2
S2
N-Channel 2
MOSFET
Schottky Diode
G1
N-Channel 1
MOSFET
S1/D2
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 125 °C/W (Channel-1) and 100 °C/W (Channel-2).
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage
VDS
30
30
V
Gate-Source Voltage
VGS
± 16
± 16
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
ID
8.0
15.2
A
TC = 70 °C
6.4
12.1
TA = 25 °C
6.7b, c
11.4b, c
TA = 70 °C
5.4b, c
9.1b, c
Pulsed Drain Current (10 µs Pulse Width)
IDM
35
60
Source-Drain Current Diode Current
TC = 25 °C
IS
1.8
3.8
TA = 25 °C
1.25b, c
2.4b, c
Pulsed Source-Drain Current
ISM
35
35
Single Pulse Avalanche Current
L = 0.1 mH
IAS
15
15
Single Pulse Avalanche Energy
EAS
11.2
11.2
mJ
Maximum Power Dissipation
TC = 25 °C
PD
1.98
4.16
W
TC = 70 °C
1.26
2.66
TA = 25 °C
1.38b, c
2.35b, c
TA = 70 °C
0.88b, c
1.5b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Channel-2
Unit
Typ.
Max.
Typ.
Max.
Maximum Junction-to-Ambientb, d
t
≤ 10 s
RthJA
72
90
43
53
°C/W
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
51
63
25
30
FEATURES
Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
Notebook Logic dc-to-dc
Low Current dc-to-dc


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