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SI4946BEY-T1-GE3 Arkusz danych(PDF) 5 Page - Vishay Siliconix |
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SI4946BEY-T1-GE3 Arkusz danych(HTML) 5 Page - Vishay Siliconix |
5 / 10 page Document Number: 73411 S09-2434-Rev. C, 16-Nov-09 www.vishay.com 5 Vishay Siliconix Si4946BEY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Power, Junction-to-Case 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Single Pulse Avalanche Capability 100 0.000001 0.001 1 10 0.0001 TA - Time In Avalanche (s) T A = L· I D BV - V DD 0.00001 |
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Podobny opis - SI4946BEY-T1-GE3 |
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