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SI6968BEDQ Arkusz danych(PDF) 2 Page - Vishay Siliconix

Numer części SI6968BEDQ
Szczegółowy opis  Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection
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Document Number: 72274
S-81221-Rev. C, 02-Jun-08
Vishay Siliconix
Si6968BEDQ
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.a
Max.
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
0.6
1.6
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 4.5 V
± 200
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1
µA
VDS = 20 V, VGS = 0 V, TJ = 70 °C
25
On-State Drain Currentb
ID(on)
VDS ≤ 5 V, VGS = 4.5 V
30
A
Drain-Source On-State Resistanceb
RDS(on)
VGS = 4.5 V, ID = 6.5 A
0.0165
0.022
Ω
VGS = 2.5 V, ID = 5.5 A
0.023
0.030
Forward Transconductanceb
gfs
VDS = 10 V, ID = 6.5 A
30
S
Diode Forward Voltageb
VSD
IS = 1.5 A, VGS = 0 V
0.71
1.2
V
Dynamica
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V, ID = 6.5 A
12
18
nC
Gate-Source Charge
Qgs
2.2
Gate-Drain Charge
Qgd
3.6
Turn-On Delay Time
td(on)
VDD = 10 V, RL = 10 Ω
ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω
245
365
ns
Rise Time
tr
330
495
Turn-Off Delay Time
td(off)
860
1300
Fall Time
tf
510
765
Gate-Current vs. Gate-Source Voltage
0
2
4
6
8
10
0
3
6
9
12
15
18
VGS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
0369
12
15
0.01
100
10000
TJ = 25 °C
0.1
1
10
1000
VGS - Gate-to-Source Voltage (V)
TJ = 150 °C


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