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SI7186DP-T1-GE3 Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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SI7186DP-T1-GE3 Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 13 page www.vishay.com 2 Document Number: 69257 S09-0271-Rev. B, 16-Feb-09 Vishay Siliconix Si7186DP Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 80 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 90 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 11 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 2.5 4.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V 1 µA VDS = 80 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 10 V, VGS = 10 V 30 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 10 A 0.0103 0.0125 Ω Forward Transconductancea gfs VDS = 15 V, ID = 10 A 18 S Dynamicb Input Capacitance Ciss VDS = 40 V, VGS = 0 V, f = 1 MHz 2840 pF Output Capacitance Coss 325 Reverse Transfer Capacitance Crss 120 Total Gate Charge Qg VDS = 40 V, VGS = 10 V, ID = 10 A 46 70 nC Gate-Source Charge Qgs 15 Gate-Drain Charge Qgd 13 Gate Resistance Rg f = 1 MHz 0.8 1.6 Ω Turn-On Delay Time td(on) VDD = 40 V, RL = 4 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 18 35 ns Rise Time tr 10 20 Turn-Off Delay Time td(off) 24 45 Fall Time tf 816 Turn-On Delay Time td(on) VDD = 40 V, RL = 4 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 6 Ω 25 50 Rise Time tr 11 22 Turn-Off Delay Time td(off) 32 60 Fall Time tf 10 20 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 32 A Pulse Diode Forward Currenta ISM 60 Body Diode Voltage VSD IS = 4.9 A 0.78 1.2 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 58 90 ns Body Diode Reverse Recovery Charge Qrr 145 230 nC Reverse Recovery Fall Time ta 43 ns Reverse Recovery Rise Time tb 15 |
Podobny numer części - SI7186DP-T1-GE3 |
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Podobny opis - SI7186DP-T1-GE3 |
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