Zakładka z wyszukiwarką danych komponentów |
|
SI7224DN-T1-GE3 Arkusz danych(PDF) 1 Page - Vishay Siliconix |
|
SI7224DN-T1-GE3 Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 18 page Vishay Siliconix Si7224DN New Product Document Number: 69500 S-81549-Rev. B, 07-Jul-08 www.vishay.com 1 Dual N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs APPLICATIONS • Notebook PC System Power • Low Current POL PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) Channel 1 30 0.035 at VGS = 10 V 6a 4.5 nC 0.042 at VGS = 4.5 V 6a Channel 2 30 0.028 at VGS = 10 V 6a 5.5 nC 0.035 at VGS = 4.5 V 6a PowerPAK® 1212-8 Bottom View 1 2 3 4 5 6 7 8 S1 G1 S2 G2 D1 D1 D2 D2 3.30 mm 3.30 mm Ordering Information: Si7224DN-T1-E3 (Lead (Pb)-free) Si7224DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G1 D1 S1 N-Channel MOSFET G2 D2 S2 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequade bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 94 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel 1 Channel 2 Unit Drain-Source Voltage VDS 30 30 V Gate-Source Voltage VGS ± 16 ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 6a 6a A TC = 70 °C 6a 6a TA = 25 °C 6a, b, c 6a, b, c TA = 70 °C 5.2b, c 5.9b, c Pulsed Drain Current IDM 25 30 Source Drain Current Diode Current TC = 25 °C IS 6a 6a TA = 25 °C 1.7b, c 2.2b, c Maximum Power Dissipation TC = 25 °C PD 17.8 23 W TC = 70 °C 11.4 14.8 TA = 25 °C 2.5b, c 2.6b, c TA = 70 °C 1.6b, c 1.7b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Channel 1 Channel 2 Unit Typ. Max. Typ. Max. Maximum Junction-to-Ambientb, f t ≤ 10 s RthJA 40 50 38 48 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 5.6 7 4.3 5.4 RoHS COMPLIANT |
Podobny numer części - SI7224DN-T1-GE3 |
|
Podobny opis - SI7224DN-T1-GE3 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |