SI7463DP datasheet(2/4 Pages) VISHAY

Numer części	SI7463DP

Szczegółowy opis	P-Channel 40-V (D-S) MOSFET

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Vishay Siliconix

SPICE Device Model Si7463DP

www.vishay.com

Document Number: 72546

S-52521

Rev. B, 12-Dec-05

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 µA

1.8

V

On-State Drain Current

a

ID(on)

VDS = −5 V, VGS = −10 V

662

A

VGS = −10 V, ID = −18.6 A

0.0075

Drain-Source On-State Resistance

a

rDS(on)

VGS = −4.5 V, ID = −15 A

0.0095

0.011

Ω

Forward Transconductance

a

gfs

VDS = −15 V, ID = −18.6 A

66

50

S

Diode Forward Voltage

a

VSD

IS = −4.5 A, VGS = 0 V

−0.84

−0.80

V

Dynamic

b

Total Gate Charge

Qg

102

121

Gate-Source Charge

Qgs

19.2

Gate-Drain Charge

Qgd

VDS = −15 V, VGS = −10 V, ID = −18.6 A

30.3

nC

Turn-On Delay Time

td(on)

30

20

Rise Time

tr

28

25

Turn-Off Delay Time

td(off)

192

200

Fall Time

tf

VDD = −20 V, RL = 20 Ω

ID ≅ −1 A, VGEN = −10 V, RG = 6 Ω

75

100

ns

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

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