SI7540DP-T1-GE3 datasheet(11/15 Pages) VISHAY

Numer części	SI7540DP-T1-GE3

Szczegółowy opis	N- and P-Channel 12-V (D-S) MOSFET

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Producent	VISHAY [Vishay Siliconix]

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Document Number 71622

28-Feb-06

Vishay Siliconix

AN821

PowerPAK SO-8 DUAL

The pin arrangement (drain, source, gate pins) and the

pin dimensions of the PowerPAK SO-8 dual are the

same as standard SO-8 dual devices. Therefore, the

PowerPAK device connection pads match directly to

those of the SO-8. As in the single-channel package,

the only exception is the extended drain connection

area. Manufacturers can likewise take immediate

advantage of the PowerPAK SO-8 dual devices by

mounting them to existing SO-8 dual land patterns.

To take the advantage of the dual PowerPAK SO-8’s

thermal performance, the minimum recommended

land pattern can be found in Application Note 826,

Recommended Minimum Pad Patterns With Outline

Drawing Access for Vishay Siliconix MOSFETs. Click

on the PowerPAK 1212-8 dual in the index of this doc-

ument.

The gap between the two drain pads is 24 mils. This

matches the spacing of the two drain pads on the Pow-

erPAK SO-8 dual package.

REFLOW SOLDERING

Vishay Siliconix surface-mount packages meet solder

reflow reliability requirements. Devices are subjected

to solder reflow as a test preconditioning and are then

reliability-tested using temperature cycle, bias humid-

ity, HAST, or pressure pot. The solder reflow tempera-

ture profile used, and the temperatures and time

duration, are shown in Figures 3 and 4.

For the lead (Pb)-free solder profile, see http://

www.vishay.com/doc?73257.

Ramp-Up Rate

+ 6

°C /Second Maximum

Temperature at 155 ± 15

°C

120 Seconds Maximum

Temperature Above 180

°C

70 - 180 Seconds

Maximum Temperature

240 + 5/- 0

°C

Time at Maximum Temperature

20 - 40 Seconds

Ramp-Down Rate

+ 6

°C/Second Maximum

Figure 3. Solder Reflow Temperature Profile

Figure 3. Solder Reflow Temperatures and Time Durations

210 - 220 °C

3 °C(max)

4 °C/s (max)

10 s (max)

183 °C

50 s (max)

Reflow Zone

60 s (min)

Pre-Heating Zone

3 °C(max)

140 - 170 °C

Maximum peak temperature at 240 °C is allowed.

Podobny numer części - SI7540DP-T1-GE3

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	SI7540DP	74Kb / 8P	N- and P-Channel 12-V (D-S) MOSFET Rev.. C, 16-Dec-02
Vishay Telefunken	SI7540DP	365Kb / 15P	N- and P-Channel 12-V (D-S) MOSFET
Vishay Siliconix	SI7540DP	366Kb / 15P	N- and P-Channel 12-V (D-S) MOSFET 01-Jan-2022
	SI7540DP	361Kb / 16P	N- and P-Channel 12-V (D-S) MOSFET Rev. F, 09-Feb-09
	SI7540DP	366Kb / 15P	N- and P-Channel 12-V (D-S) MOSFET 01-Jan-2022

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Podobny opis - SI7540DP-T1-GE3

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	SIA527DJ	333Kb / 14P	N- and P-Channel 12-V (D-S) MOSFET Rev. A, 29-Jul-13
	SMMA511DJ	264Kb / 14P	N- and P-Channel 12 V (D-S) MOSFET Rev. B, 05-Oct-09
	SI7540DP	74Kb / 8P	N- and P-Channel 12-V (D-S) MOSFET Rev.. C, 16-Dec-02
	SIA527DJ	343Kb / 14P	N- and P-Channel 12-V (D-S) MOSFET 01-Jan-2022
Vishay Telefunken	SI7540DP	365Kb / 15P	N- and P-Channel 12-V (D-S) MOSFET
Vishay Siliconix	SI7540DP	361Kb / 16P	N- and P-Channel 12-V (D-S) MOSFET Rev. F, 09-Feb-09
	SIA511DJ	321Kb / 6P	N- and P-Channel 12-V (D-S) MOSFET Rev. A, 19-Nov-07
	SIA517DJ	326Kb / 14P	N- and P-Channel 12-V (D-S) MOSFET 01-Jan-2022
Shenzhen Tuofeng Semico...	SIA517	3Mb / 10P	N- and P-Channel 12-V (D-S) MOSFET Feb,2018 V1.0
DinTek Semiconductor Co...	DTQ2D106	1Mb / 9P	N- and P-Channel 12 V (D-S) MOSFET REV 1.0

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SI7540DP-T1-GE3 Arkusz danych(PDF) 11 Page - Vishay Siliconix

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