Vishay Siliconix

Si7772DP

New Product

Document Number: 65169

S09-1822-Rev. A, 14-Sep-09

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

Power MOSFET and Schottky Diode

•

•

100 % UIS Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Notebook System Power

- Low Side

PRODUCT SUMMARY

30

8.3 nC

31.6

Ordering Information: Si7772DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

S

S

G

D

D

D

D

6.15 mm

5.15 mm

Bottom View

N-Channel MOSFET

G

S

D

Schottky Diode

Notes:

a. Package limited.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under Steady State conditions is 70 °C/W.

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

30

V

Gate-Source Voltage

± 20

A

28.5

Pulsed Drain Current

50

Continuous Source-Drain Diode Current

27

Single Pulse Avalanche Current

L = 0.1 mH

15

Single Pulse Avalanche Energy

11.25

mJ

Maximum Power Dissipation

29.8

W

19

Operating Junction and Storage Temperature Range

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

≤ 10 s

27

32

°C/W

Maximum Junction-to-Case (Drain)

Steady State

3.5

4.2