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SI7774DP-T1-GE3 Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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SI7774DP-T1-GE3 Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 13 page Document Number: 70630 S10-1534-Rev. A, 19-Jul-10 www.vishay.com 3 Vishay Siliconix Si7774DP New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 16 32 48 64 80 0.0 0.5 1.0 1.5 2.0 2.5 VGS =10 V thru 4V VGS =3V VGS =2V V DS - Drain-to-Source Voltage (V) 0.0025 0.0029 0.0033 0.0037 0.0041 0.0045 0 16324864 80 VGS =10V VGS =4.5 V I D - Drain Current (A) 0 2 4 6 8 10 0 10203040 50 ID =10A VDS =15V VDS =10V VDS =20V Q g - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 2 4 6 8 10 01 2 3 45 TC = 25 °C TC = 125 °C TC = - 55 °C V GS - Gate-to-Source Voltage (V) Crss 0 700 1400 2100 2800 3500 0 5 10 15 20 Ciss Coss V DS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 ID =10A VGS =10V VGS =4.5 V T J - Junction Temperature (°C) |
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