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SI7810DN Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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SI7810DN Arkusz danych(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si7810DN SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 3 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 88 A VGS = 10 V, ID = 5.4 A 0.051 0.052 Drain-Source On-State Resistance a rDS(on) VGS = 6 V, ID = 4.6 A 0.069 0.070 Ω Forward Transconductance a gfs VDS = 15 V, ID = 5.4 A 12 12 S Diode Forward Voltage a VSD IS = 3.2 A, VGS = 0 V 0.70 0.78 V Dynamic b Total Gate Charge Qg 13 13.5 Gate-Source Charge Qgs 3 3 Gate-Drain Charge Qgd VDS = 50 V, VGS = 10 V, ID = 5.4 A 4.6 4.6 nC Turn-On Delay Time td(on) 12 10 Rise Time tr 16 15 Turn-Off Delay Time td(off) 20 20 Fall Time tf VDD = 50 V, RL = 50 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω 33 15 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 71697 S-60245 Rev. B, 20-Feb-06 |
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