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SI7812DN Arkusz danych(PDF) 6 Page - Vishay Siliconix |
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SI7812DN Arkusz danych(HTML) 6 Page - Vishay Siliconix |
6 / 14 page www.vishay.com 6 Document Number: 73332 S-83050-Rev. D, 29-Dec-08 Vishay Siliconix Si7812DN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 5 10 15 20 25 30 35 0 25 50 75 100 125 150 TC - Case Temperature ( ) °C Package Limited Power, Junction-to-Case 0 10 20 30 40 50 60 25 50 75 100 125 150 TC - Case Temperature (°C) Single Pulse Avalanche Capability 100 1 0 . 0 1 0 0 . 0 1 0 0 0 0 0 . 0 1 10 0.0001 TA - Time In Avalanche (s) T A L I D BV V DD 0.00001 |
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