SI7852ADP-T1-GE3 datasheet(3/13 Pages) VISHAY

Numer części	SI7852ADP-T1-GE3

Szczegółowy opis	N-Channel 80-V (D-S) MOSFET

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Document Number: 73988

S09-0223-Rev. C, 09-Feb-09

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Vishay Siliconix

Si7852ADP

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

0

12

24

36

48

60

0

1

234

5

VDS - Drain-to-Source Voltage (V)

VGS =10 V thru 7 V

6 V

5 V

ID - Drain Current (A)

0.012

0.014

0.016

0.018

0.020

0.022

0

102030

405060

VGS = 8V

VGS =10 V

0

2

4

6

8

10

0

7

14

21

28

35

ID =10A

Qg - Total Gate Charge (nC)

VDS =40 V

VDS =60 V

VDS =20 V

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

2

4

6

8

10

0

246

8

10

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = - 55 °C

TC = 125 °C

Crss

0

500

1000

1500

2000

2500

0

12243648

60

Coss

Ciss

VDS - Drain-to-Source Voltage (V)

0.5

0.8

1.1

1.4

1.7

2.0

- 50

- 25

0

25

50

75

100

125

150

TJ - JunctionTemperature (°C)

ID =10A

VGS =10 V

VGS = 8V

Podobny numer części - SI7852ADP-T1-GE3

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Vishay Siliconix	SI7852AD	320Kb / 13P	N-Channel 80-V (D-S) MOSFET 01-Jan-2022

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SI7852ADP-T1-GE3 Arkusz danych(PDF) 3 Page - Vishay Siliconix

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