Zakładka z wyszukiwarką danych komponentów |
|
SI7900AEDN Arkusz danych(PDF) 4 Page - Vishay Siliconix |
|
SI7900AEDN Arkusz danych(HTML) 4 Page - Vishay Siliconix |
4 / 12 page www.vishay.com 4 Document Number: 72287 S-81544-Rev. C, 07-Jul-08 Vishay Siliconix Si7900AEDN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.01 0.02 0.03 0.04 0.05 0 123 456 ID = 8.5 A VGS - Gate-to-Source Voltage (V) 0.001 0 1 160 200 80 10 0.1 Time (s) 40 120 0.01 Threshold Voltage Safe Operating Area, Junction-to-Case - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) 100 1 0.1 1 10 100 0.01 10 1 ms 0.1 Limited by RDS(on)* TC = 25 °C Single Pulse 10 ms 100 ms DC 10 s 1 s VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which RDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 0.1 0.01 10-4 10-3 10-2 10-1 1 100 600 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 115°C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM Square Wave Pulse Duration (s) 10 |
Podobny numer części - SI7900AEDN_08 |
|
Podobny opis - SI7900AEDN_08 |
|
|
Link URL |
Polityka prywatności |
ALLDATASHEET.PL |
Czy Alldatasheet okazała się pomocna? [ DONATE ] |
O Alldatasheet | Reklama | Kontakt | Polityka prywatności | Linki | Lista producentów All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |