SI7980DP datasheet(7/18 Pages) VISHAY

Numer części	SI7980DP

Szczegółowy opis	Dual N-Channel 20-V (D-S) MOSFET with Schottky Diode

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Producent	VISHAY [Vishay Siliconix]

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Document Number: 68391

S-83039-Rev. C, 29-Dec-08

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Vishay Siliconix

Si7980DP

CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Normalized Thermal Transient Impedance, Junction-to-Ambient

10-3

10-2

1

10

1000

10-1

10-4

100

0.2

0.1

0.05

Square WavePulse Duration (s)

0.1

0.01

Single Pulse

t1

t2

Notes:

PDM

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 88 °C/W

3. TJM -TA =PDMZthJA(t)

t1

t2

4. Surface Mounted

Duty Cycle = 0.5

0.02

1

Normalized Thermal Transient Impedance, Junction-to-Case

10-4

10-3

1

10

10-2

10-5

0.2

0.1

Duty Cycle = 0.5

Square WavePulse Duration (s)

1

0.1

0.01

Single Pulse

0.02

0.05

-1

Podobny numer części - SI7980DP

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Vishay Siliconix	SI7980DP	345Kb / 18P	Dual N-Channel 20 V (D-S) MOSFET with Schottky Diode 08-Feb-17
Vishay Siliconix	SI7980DP	345Kb / 18P	Dual N-Channel 20 V (D-S) MOSFET with Schottky Diode 08-Feb-17

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	SI7980DP	345Kb / 18P	Dual N-Channel 20 V (D-S) MOSFET with Schottky Diode 08-Feb-17
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Analog Power	AM3826N	286Kb / 5P	N-Channel 20-V (D-S) MOSFET With Schottky Diode
Vishay Siliconix	SI3812DV	111Kb / 7P	N-Channel 20-V (D-S) MOSFET With Schottky Diode Rev. E, 18-Aug-03
	SI5858DU	126Kb / 10P	N-Channel 20-V (D-S) MOSFET with Schottky Diode Rev. B, 23-Jun-08
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