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SS1H9 Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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SS1H9 Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 4 page SS1H9 & SS1H10 Vishay General Semiconductor Document Number: 88747 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Figure 3. Typical Instantaneous Forward Characteristics Figure 4. Typical Reverse Characteristics T J = 150 °C T J = 125 °C T J = 175 °C T J = 25 °C Instantaneous Forward Voltage (V) 100 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.1 1 10 100 1000 10 000 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage (%) T J = 150 °C T J = 125 °C T J = 175 °C T J = 25 °C Figure 5. Typical Junction Capacitance Figure 6. Typical Transient Thermal 10 100 1000 0.1 1 10 100 Reverse Voltage (V) 1 10 100 0.01 0.1 1 10 100 t - Pulse Duration (s) 0.030 (0.76) 0.060 (1.52) 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) Cathode Band 0 (0) DO-214AC (SMA) Mounting Pad Layout 0.074 (1.88) MAX. 0.208 (5.28) REF. 0.066 (1.68) MIN. 0.060 (1.52) MIN. |
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