TSFF5510_09 datasheet(2/5 Pages) VISHAY

Numer części	TSFF5510

Szczegółowy opis	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

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Producent	VISHAY [Vishay Siliconix]

Strona internetowa	http://www.vishay.com

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Document Number: 81835

2

Rev. 1.2, 25-Jun-09

TSFF5510

Vishay Semiconductors High Speed Infrared Emitting Diode,

870 nm, GaAlAs Double Hetero

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Fig. 2 - Forward Current Limit vs. Ambient Temperature

Note

Tamb = 25 °C, unless otherwise specified

0

20

40

60

80

100

120

140

160

180

200

010

20

30

40

50

60

70

80

90 100

21142

T

amb - Ambient Temperature (°C)

R

thJA = 230 K/W

0

20

40

60

80

100

120

0

10

203040

506070

80

90 100

T

amb - Ambient Temperature (°C)

21143

R

thJA = 230 K/W

BASIC CHARACTERISTICS

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA, tp = 20 ms

VF

1.3

1.45

1.7

V

IF = 450 mA, tp = 100 µs

VF

1.5

1.75

2.1

V

IF = 1 A, tp = 100 µs

VF

2.1

V

Temperature coefficient of VF

IF = 1 mA

TKVF

- 1.8

mV/K

Reverse current

VR = 5 V

IR

10

µA

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

110

pF

Radiant intensity

IF = 100 mA, tp = 20 ms

Ie

16

32

48

mW/sr

Radiant power

IF = 100 mA, tp = 20 ms

φ

e

55

mW

Temperature coefficient of

φ

e

IF = 100 mA

TK

φ

e

- 0.35

%/K

Angle of half intensity

ϕ

± 38

deg

Peak wavelength

IF = 100 mA

λ

p

870

nm

Spectral bandwidth

IF = 100 mA

Δλ

55

nm

Temperature coefficient of

λ

p

IF = 100 mA

TK

λ

p

0.25

nm/K

Rise time

IF = 100 mA

tr

15

ns

Fall time

IF = 100 mA

tf

15

ns

Cut-off frequency

IDC = 70 mA, IAC = 30 mA pp

fc

24

MHz

Podobny numer części - TSFF5510_09

Producent	Numer części	Arkusz danych	Szczegółowy opis
Vishay Siliconix	TSFF5510	108Kb / 5P	High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero Rev. 1.1, 16-Sep-08

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Podobny opis - TSFF5510_09

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