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FCA36N60NF Arkusz danych(PDF) 1 Page - Fairchild Semiconductor |
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FCA36N60NF Arkusz danych(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page tm February 2011 ©2011 Fairchild Semiconductor Corporation FCA36N60NF Rev. A www.fairchildsemi.com 1 SupreMOS TM FCA36N60NF N-Channel MOSFET, FRFET 600V, 36A, 95m Ω Features •RDS(on) = 80mΩ ( Typ.)@ VGS = 10V, ID = 18A • Ultra Low Gate Charge ( Typ. Qg = 86nC) • Low Effective Output Capacitance • 100% Avalanche Tested • RoHS Compliant Description The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based tech- nologies. By utilizing this advanced technology and precise pro- cess control, SupreMOS provides world class Rsp, superior switching performance and ruggedness. This SupreMOS MOSFET fits the industry’s AC-DC SMPS requirements for PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. D G S GS D TO-3PN MOSFET Maximum Ratings T C = 25 oC unless otherwise noted* Thermal Characteristics Symbol Parameter FCA36N60NF Units VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±30 V ID Drain Current Continuous (TC = 25 oC) 34.9 A Continuous (TC = 100 oC) 22 IDM Drain Current Pulsed (Note 1) 104.7 A EAS Single Pulsed Avalanche Energy (Note 2) 1800 mJ IAR Avalanche Current 12 A EAR Repetitive Avalanche Energy 3.12 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 50 V/ns MOSFET dv/dt Ruggedness 100 PD Power Dissipation (TC = 25 oC) 312 W Derate above 25oC2.6 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +150 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter FCA36N60NF Units RθJC Thermal Resistance, Junction to Case 0.40 oC/W RθCS Thermal Resistance, Case to Heat Sink (Typical) 0.24 RθJA Thermal Resistance, Junction to Ambient 40 *Drain current limited by maximum junction temperature |
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