ADC1112D125HN datasheet(7/41 Pages) PHILIPS

Numer części	ADC1112D125HN

Szczegółowy opis	Dual 11-bit ADC; CMOS or LVDS DDR digital outputs

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ADC1112D125

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Product data sheet

Rev. 2 — 3 March 2011

7 of 41

NXP Semiconductors

ADC1112D125

Dual 11-bit ADC: CMOS or LVDS DDR digital outputs

7.

Limiting values

8.

Thermal characteristics

[1]

Value for six layers board in still air with a minimum of 64 thermal vias.

9.

Static characteristics

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VO

output voltage

pins DA10 to DA0 and

DB10 to DB0 or pins

DA9_DA10_P to LOW_DA0_P,

DA9_DA10_M to LOW_DA0_M,

DB9_DB10_P to LOW_DB0_P

and

DB9_DB10_M to LOW_DB0_M

−0.4

+3.9

V

VDDA

analog supply

voltage

−0.4

+3.9

V

VDDO

output supply voltage

−0.4

+3.9

V

Tstg

storage temperature

−55

+125

°C

Tamb

ambient temperature

−40

+85

°C

Tj

junction temperature

-

125

°C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

Rth(j-a)

thermal resistance from junction to ambient

[1] 15.6

K/W

Rth(j-c)

thermal resistance from junction to case

[1] 6.3

K/W

Table 6.

Static characteristics[1]

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Supplies

VDDA

analog supply voltage

2.85

3.0

3.4

V

VDDO

output supply voltage

CMOS mode

1.65

1.8

3.6

V

LVDS DDR mode

2.85

3.0

3.6

V

IDDA

analog supply current

fclk =125 Msps; fi =70MHz

-

400

-

mA

IDDO

output supply current

CMOS mode; fclk =125 Msps;

fi =70MHz

-16

-

mA

LVDS DDR mode:

fclk =125 Msps; fi =70MHz

-82

-

mA

P

power dissipation

ADC1112D125;

analog supply only

-

1230

-

mW

Power-down mode

-

24

-

mW

Sleep mode

-

80

-

mW

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