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BCV26 Arkusz danych(PDF) 2 Page - Siemens Semiconductor Group

Numer części BCV26
Szczegółowy opis  PNP Silicon Darlington Transistors (For general AF applications High collector current)
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Producent  SIEMENS [Siemens Semiconductor Group]
Strona internetowa  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BCV26 Arkusz danych(HTML) 2 Page - Siemens Semiconductor Group

  BCV26 Datasheet HTML 1Page - Siemens Semiconductor Group BCV26 Datasheet HTML 2Page - Siemens Semiconductor Group BCV26 Datasheet HTML 3Page - Siemens Semiconductor Group BCV26 Datasheet HTML 4Page - Siemens Semiconductor Group  
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BCV 26
BCV 46
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Base-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
DC current gain1)
IC = 100
µA, VCE = 1 V
BCV 26
BCV 46
IC = 10 mA, VCE = 5 V
BCV 26
BCV 46
IC = 100 mA, VCE = 5 V
BCV 26
BCV 46
IC = 0.5 A, VCE = 5 V
BCV 26
BCV 46
V
Collector-emitter breakdown voltage
IC = 10 mA
BCV 26
BCV 46
V(BR)CE0
30
60
nA
nA
µA
µA
Collector cutoff current
VCB = 30 V
BCV 26
VCB = 60 V
BCV 46
VCB = 30 V, TA = 150 ˚C
BCV 26
VCB = 60 V, TA = 150 ˚C
BCV 46
ICB0
100
100
10
10
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
IC = 100
µA
BCV 26
BCV 46
V(BR)CB0
40
80
Emitter-base breakdown voltage, IE = 10
µA
V(BR)EB0
10
V
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA
VCEsat
––1
hFE
4000
2000
10000
4000
20000
10000
4000
2000
VBEsat
1.5
nA
Emitter cutoff current, VEB = 4 V
IEB0
100
MHz
Transition frequency
IC = 50 mA, VCE = 5 V, f = 20 MHz
fT
200
AC characteristics
pF
Output capacitance
VCB = 10 V, f = 1 MHz
Cobo
4.5
1)
Pulse test: t
300 µs, D = 2 %.


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