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BCX58VIII Arkusz danych(PDF) 2 Page - Siemens Semiconductor Group

Numer części BCX58VIII
Szczegółowy opis  NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage)
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Producent  SIEMENS [Siemens Semiconductor Group]
Strona internetowa  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

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Semiconductor Group
2
BCX 58
BCX 59
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
V
Collector-emitter breakdown voltage
IC = 2 mA
BCX 58
BCX 59
V(BR)CE0
32
45
nA
nA
µA
µA
Collector cutoff current
VCB = 32 V
BCX 58
VCB = 45 V
BCX 59
VCB = 32 V, TA = 150 ˚C
BCX 58
VCB = 45 V, TA = 150 ˚C
BCX 59
ICB0
20
20
10
10
Unit
Values
Parameter
Symbol
min.
typ.
max.
DC characteristics
Collector-base breakdown voltage
IC = 10
µA
BCX 58
BCX 59
V(BR)CB0
32
45
Emitter-base breakdown voltage
IE = 1
µA
V(BR)EB0
7––
DC current gain
IC = 10
µA, VCE = 5 V
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X,
BCX 59 X
IC = 2 mA, VCE = 5 V
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X,
BCX 59 X
IC = 100 mA, VCE = 1 V1)
BCX 58 VII, BCX 59 VII
BCX 58 VIII, BCX 59 VIII
BCX 58 IX, BCX 59 IX
BCX 58 X,
BCX 59 X
hFE
20
20
40
100
120
180
250
380
40
45
60
60
78
145
220
300
170
250
350
500
220
310
460
630
nA
Emitter cutoff current
VEB = 4 V
IEB0
––20
µA
Collector cutoff current
VCE = 32 V, VBE = 0.2 V,TA = 100 ˚C
VCE = 45 V, VBE = 0.2 V,TA = 100 ˚C
ICEX
20
20
1)
Pulse test: t
300 µs, D 2%.


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