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BFP193 Arkusz danych(PDF) 1 Page - Siemens Semiconductor Group

Numer części BFP193
Szczegółowy opis  NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
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Producent  SIEMENS [Siemens Semiconductor Group]
Strona internetowa  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BFP193 Arkusz danych(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
1
Dec-13-1996
BFP 193
NPN Silicon RF Transistor
• For low noise, high-gain amplifiers up to 2GHz
• For linear broadband amplifiers
fT = 8GHz
F = 1.3dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFP 193
RCs
Q62702-F1282
1 = C
2 = E
3 = B
4 = E
SOT-143
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCEO
12
V
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2
Collector current
IC
80
mA
Base current
IB
10
Total power dissipation
TS ≤ 72 °C
Ptot
580
mW
Junction temperature
Tj
150
°C
Ambient temperature
TA
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 135
K/W
1)
TS is measured on the collector lead at the soldering point to the pcb.


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