BC818-16 datasheet(1/2 Pages) HTSEMI

Numer części	BC818-16

Szczegółowy opis	TRANSISTOR (NPN)

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BC818-16

BC818-25

BC818-40

FEATURES

For general AF applications

High collector current

High current gain

Low collector-emitter saturation voltage

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

30

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

0.5

A

PC

Collector Power Dissipation

0.3

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

VCBO

IC= 10μA, IE=0

30

V

Collector-emitter breakdown voltage

VCEO

IC= 10mA, IB=0

25

V

Emitter-base breakdown voltage

VEBO

IE= 10μA, IC=0

5

V

Collector cut-off current

ICBO

VCB= 25 V , IE=0

0.1

μA

Emitter cut-off current

IEBO

VEB= 4V, IC=0

0.1

μA

hFE(1)

VCE= 1V, IC= 100mA

100

630

DC current gain

hFE(2)

VCE= 1V, IC= 300mA

60

Collector-emitter saturation voltage

VCE(sat)

IC= 500mA, IB= 50mA

0.7

V

Base-emitter saturation voltage

VBE(sat)

IC= 500mA, IB= 50mA

1.2

V

Base-emitter voltage

VBE

VCE=1V, IC= 500mA

1.2

V

Collecter capactiance

Cob

VCB=10V ,f=1MHz

6

pF

Transition frequency

fT

VCE= 5 V,

IC= 50mA

f=100MHz

170

MHz

CLASSIFICATION OF

hFE (1)

Rank

BC818-16

BC818-25

BC818-40

Range

100-250

160-400

250-630

Marking

6E

6F

6G

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

BC818

TRANSISTOR (NPN)

１　

Ｄａｔｅ：２０１１／０５

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