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BGA312 Arkusz danych(PDF) 2 Page - Siemens Semiconductor Group |
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BGA312 Arkusz danych(HTML) 2 Page - Siemens Semiconductor Group |
2 / 4 page BGA 312 Semiconductor Group Sep-04-1998 2 Electrical Characteristics at TA = 25 °C, unless otherwise specified. Parameter Values Symbol Unit max. typ. min. AC characteristics ( VD = 4.7 V, Zo = 50 Ω) dB 12 11 10 - - - - - - | S21|2 Insertion power gain f = 0.1 GHz f = 1 GHz f = 1.8 GHz Insertion point gain flatness f = 0.1 GHz to 0.6 GHz - ∆ |S 21| 2 - +-0.6 Noise figure f = 0.1 GHz f = 1 GHz f = 2 GHz NF 5.5 6 7 - - - - - - 1dB compression point f = 1 GHz P-1dB - dBm - 9 Return loss input f = 0.1 GHz to 2 GHz RLin - 20 - dB Return loss output f = 0.1 GHz to 3 GHz RLout - 14 - Typical biasing configuration EHA07313 D V RFC (optional) IN C Block Block C OUT Ι D Bias R min. CC V =7 V 1 3 2 4 RBias = VCC - VD / ID VD = 4.7V Semiconductor Group 2 1998-11-01 |
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