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1N4448W-V Arkusz danych(PDF) 3 Page - Vishay Siliconix |
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1N4448W-V Arkusz danych(HTML) 3 Page - Vishay Siliconix |
3 / 5 page 1N4448W-V Document Number 85722 Rev. 1.4, 17-Aug-10 Vishay Semiconductors www.vishay.com 3 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Typical Characteristics Tamb = 25 °C unless otherwise specified Figure 1. Forward characteristics Figure 2. Dynamic Forward Resistance vs. Forward Current Figure 3. Admissible Power Dissipation vs. Ambient Temperature 18105 VF (V) T j = 100 °C T j = 25 °C 10- 2 10- 1 102 103 1 10 12 0 17438 f = 1 kHz T j = 25 °C IF (mA) 10 102 103 104 10-2 10-1 1102 10 2 5 2 5 2 5 2 5 17439 mW T amb P tot 300 500 700 1000 100 200 °C 100 200 400 600 800 900 0 0 Figure 4. Relative Capacitance vs. Reverse Voltage Figure 5. Leakage Current vs. Junction Temperature 17440 VR (V) 0.7 0.8 0.9 1.0 1.1 f = 1 MHz T j = 25 °C 2 0 8 6 410 17441 Tj (°C) 10 102 103 104 100 200 2 5 2 5 2 5 2 5 V R = 20 V 1 0 |
Podobny numer części - 1N4448W-V_12 |
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Podobny opis - 1N4448W-V_12 |
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