BAS16-V

Document Number 85539

Rev. 1.6, 12-Aug-10

Vishay Semiconductors

www.vishay.com

1

12

3

16923

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Small Signal Fast Switching Diode

Features

• Silicon Epitaxial Planar Diode

• Ultra fast switching speed

• Surface mount package ideally suited for

automatic insertion

• High conductance

• AEC-Q101 qualified

• Compliant to RoHS directive 2002/95/EC and in

accordance to WEEE 2002/96/EC

Mechanical Data

Case: SOT-23

Weight: approx. 8.0 mg

Polarity: cathode band

Packaging Codes/Options:

GS18 / 10 k per 13" reel (8 mm tape), 10 k/box

GS08 / 3 k per 7" reel (8 mm tape), 15 k/box

Parts Table

Absolute Maximum Ratings

Part

Ordering code

Marking

Remarks

BAS16-V

BAS16-V-GS18 or BAS16-V_GS08

A6

Tape and Reel

Parameter

Test condition

Symbol

Value

Unit

Non repetitive peak reverse

voltage

100

V

Repetitive peak reverse voltage

= Working peak reverse voltage

= DC Blocking voltage

75

V

Peak forward surge current

1A

2A

Average forward current

Half wave rectification with

resistive load and f

≥ 50 MHz, on

ceramic substrate

8 mm x10 mm x 0.7 mm

150

mA

Forward current

On ceramic substrate

8 mm x 10 mm x 0.7 mm

300

mA

Power dissipation

On ceramic substrate

8 mm x 10 mm x 0.7 mm

350

mW