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TIP31C Arkusz danych(PDF) 1 Page - Tiger Electronic Co.,Ltd |
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TIP31C Arkusz danych(HTML) 1 Page - Tiger Electronic Co.,Ltd |
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1 / 1 page TO-220 Parameter Symbol Value Unit Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage V CEO 100 V Emitter-Base Voltage V EBO 5 V Collector Current I C 3.0 A Base Current I B 1.0 A Total Dissipation at P tot 40 W Max. Operating Junction Temperature T j 150 oC Storage Temperature T stg -55~150 oC TIP31C / TIP32C DESCRIPTION Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICEO V CB=100V, IE=0 0.3 mA Emitter Cut-off Current IEBO V EB=5V, IC=0 1.0 mA Collector-Emitter Sustaining Voltage VCEO I C=30mA, IB=0 100 V DC Current Gain hFE(1) V CE=4V, IC=1.0A 25 hFE(2) V CE=4V, IC=3.0A 10 50 Collector-Emitter Saturation Voltage VCE(sat) I C=3A,IB=300mA 1.2 V Base-Emitter Saturation Voltage VBE(sat) V CE=4V,IC=3.0A 1.8 V Current Gain Bandwidth Product fT V CE=10V,IC=500mA 3 MHz Complementary Silicon Power Ttransistors Product specification It is intented for use in power amplifier and switching applications. ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) O ( Ta = 25 C) O TIGER ELECTRONIC CO.,LTD |
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