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TIP35C Arkusz danych(PDF) 1 Page - Tiger Electronic Co.,Ltd |
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TIP35C Arkusz danych(HTML) 1 Page - Tiger Electronic Co.,Ltd |
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1 / 1 page Parameter Symbol Value Unit Collector-Base Voltage V CBO 100 V Collector-Emitter Voltage V CEO 100 V Emitter-Base Voltage V EBO 5 V Collector Current I C 25 A Base Current I B 5 A Total Dissipation at P tot 125 W Max. Operating Junction Temperature T j 150 oC Storage Temperature T stg -55~150 oC TIP35C / TIP36C DESCRIPTION Parameter Symbol Test Conditions Min. Typ. Max. Unit Collector Cut-off Current ICEO V CB=60V, IE=0 1.0 mA Emitter Cut-off Current IEBO V EB=5V, IC=0 1.0 mA Collector-Emitter Sustaining Voltage VCEO I C=30mA, IB=0 100 V DC Current Gain hFE(1) V CE=4V, IC=1.5A 25 hFE(2) V CE=4V, IC=15A 10 60 Collector-Emitter Saturation Voltage VCE(sat) I C=25A,IB=5A 4.0 V Base-Emitter Voltage VBE V CE=4V,IC=15A 2.0 V Transition Frequency fT V CE=5V,IC=1A 3 MHz Complementary Silicon High Power Ttransistors Product specification It is intented for use in power amplifier and switching applications. ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS TO-3PN ( Ta = 25 C) O ( Ta = 25 C) O TIGER ELECTRONIC CO.,LTD |
Podobny numer części - TIP35C |
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Podobny opis - TIP35C |
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