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2N3114 Arkusz danych(PDF) 1 Page - Central Semiconductor Corp |
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2N3114 Arkusz danych(HTML) 1 Page - Central Semiconductor Corp |
1 / 2 page 2N3114 NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3114 is a NPN Silicon Transistor, mounted in a hermetically sealed package, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 150 V Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 5.0 V Continuous Collector Current IC 200 mA Power Dissipation PD 0.8 W Power Dissipation (TC=25°C) PD 5.0 W Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN MAX UNITS ICBO VCB=100V 10 nA ICBO VCB=100V, TA=150°C 10 µA IEBO VEB=4.0V 100 nA BVCBO IC=100µA 150 V BVCEO IC=30mA 150 V BVEBO IE=100µA 5.0 V VCE(SAT) IC=50mA, IB=5.0mA 1.0 V VBE(SAT) IC=50mA, IB=5.0mA 0.9 V hFE VCE=10V, IC=0.1mA 15 hFE VCE=10V, IC=30mA 30 120 hFE VCE=10V, IC=30mA, TA=–55°C 12 fT VCE=10V, IC=30mA, f=20MHz 40 MHz Cob VCB=20V, IE=0, f=140kHz 9.0 pF Cib VEB=0.5V, IC=0, f=140kHz 80 pF TO-39 CASE R0 (4-November 2010) www.centra lsemi.com |
Podobny numer części - 2N3114 |
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Podobny opis - 2N3114 |
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