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BUZ101SL-4 Arkusz danych(PDF) 4 Page - Siemens Semiconductor Group |
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BUZ101SL-4 Arkusz danych(HTML) 4 Page - Siemens Semiconductor Group |
4 / 8 page Semiconductor Group 4 02/Oct/1997 BUZ 101SL-4 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TA = 25 °C IS - - 4.1 A Inverse diode direct current, pulsed TA = 25 °C ISM - - 16.4 Inverse diode forward voltage VGS = 0 V, IF = 8.2 A VSD - 0.95 1.6 V Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs trr - 50 75 ns Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Qrr - 80 120 nC |
Podobny numer części - BUZ101SL-4 |
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Podobny opis - BUZ101SL-4 |
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