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AM50-0001 Arkusz danych(PDF) 5 Page - M/A-COM Technology Solutions, Inc.

Numer części AM50-0001
Szczegółowy opis  GaAs MMIC Low Noise Amplifier SOIC-8 Platform
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Producent  MA-COM [M/A-COM Technology Solutions, Inc.]
Strona internetowa  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

AM50-0001 Arkusz danych(HTML) 5 Page - M/A-COM Technology Solutions, Inc.

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GaAs MMIC Low Noise Amplifier SOIC-8 Platform
Rev. V3
Application Note
M540
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.4155721
• China Tel: +86.21.2407.1588
5
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
The recommended PCB layout for this MMIC LNA prod-
uct family, except the AM50-0002, is shown in Figure 9;
the AM50-0002 layout is in Figure 10. The main point of
both PCB layouts is, first and foremost, proper low induc-
tance grounding. The use of plated through holes close
to and under package is strongly recommended. Board
thickness is a trade-off between RF transmission line
losses on thin boards and ground inductance and
transmission line width on thick boards; M/A-COM has
used RF board thicknesses from 0.008 to 0.032 inches
without significant change in RF performance.
Customer Manufacturing
Considerations
Most commercial microwave high volume applications
use automated soldering techniques.
M/A-COM pro-
vides guidelines for surface mount board layout, solder
selection and screening, and reflow soldering tempera-
ture versus time profile in the application note “Surface
Mounting Instructions.”
Another manufacturing consideration is getting the heat
out of the package. With all of the MMIC LNAs, except
for the AM50-0001, the typical temperature rise is less
than 20˚C even with the higher current optional bias in-
stalled. However, care must be taken when using the
AM50-0001 not to exceed the 150˚C junction tempera-
ture maximum rating; with a thermal resistance of 125˚C/
W and an operating temperature of 85˚C, the maximum
power dissipation is 0.5 W
.
Customer Quality and Reliability
There are two main areas of concern for the long term
reliability of these MMIC LNAs: heat from exceeding the
junction temperature maximum ratings and ESD. Ther-
mal effects are relatively straightforward to correct-
namely, provide adequate heat sinking.
For all the
LNAs, except for the AM50-0001, a good RF ground will
provide sufficient heat sinking. For the AM50-0001, care
must be taken to provide an adequate thermal path, also.
ESD is a major issue for customers to take seriously to
ensure long term reliability.
As stated before, M/A-
COM’s GaAs MMIC LNAs low level class 1 EST devices.
What this means is that ESD voltage as low as 350 volts
can damage the ICs. Remember , static kills; please do
as much as possible to eliminate ESD from the manufac-
turing floor.
MMIC LNA Product Applications
M/A-COM’s GaAs MMIC LNAs are intended to be used
in the receive chain as the first gain stage of a low noise,
high dynamic range receiver. They provide the requisite
gain, very low noise figure, high dynamic range, and very
low bias current at low cost. While the receive chain
applications for the MMIC LNA family are relatively obvi-
ous, these MMIC LNAs can provide unique solutions for
LO buffering, transmitter driver amplifiers, and a wide
variety of applications in addition to those depicted in the
data sheet. The following subsections describe a few
alternative applications for these MMIC LNAs.
MAAM12022 As An LO Buffer Amplifier
The MAAM12022 was originally designed as a GPC or
JDC receive MMIC LNA. However, if you bias the device
at 8 volts on pin 7 (VDD) and 20 mA through the use of an
external resistor of approximately 30 ohms from pin 2 to
ground, it becomes an excellent LO buffer amplifier. It
exhibits 16 dB gain, better tan 40 dB of reverse isolation,
and produces +14 dBm of output power at –1 dB gain
compression.
The noise figure performance remains
essentially unchanged. The performance graphs of this
amplifier over bias are shown in Figures 11 and 12 for
gain and P1dB, respectively.
Five other LNAs in this platform share the capability to
increase gain and dynamic range through the use of an
external resistor from pin 2 to ground and higher bias
voltage. The increase in performance for the AM50-0001
is discussed below in a separate subsection. The other
two low gain LNAs, the MAAM12032 and MAAM2010,
will exhibit performance gains similar to those shown
above for the MAAM12022. The two high gain LNAs,
MAAM12021 and MAAM12031, will exhibit a gain in-
crease of 2 dB and produce better than +14 dBm at -1
dB gain compression when biased at 8 V and 20 mA.


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