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AM50-0001 Arkusz danych(PDF) 5 Page - M/A-COM Technology Solutions, Inc. |
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AM50-0001 Arkusz danych(HTML) 5 Page - M/A-COM Technology Solutions, Inc. |
5 / 7 page GaAs MMIC Low Noise Amplifier SOIC-8 Platform Rev. V3 Application Note M540 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.4155721 • China Tel: +86.21.2407.1588 5 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. The recommended PCB layout for this MMIC LNA prod- uct family, except the AM50-0002, is shown in Figure 9; the AM50-0002 layout is in Figure 10. The main point of both PCB layouts is, first and foremost, proper low induc- tance grounding. The use of plated through holes close to and under package is strongly recommended. Board thickness is a trade-off between RF transmission line losses on thin boards and ground inductance and transmission line width on thick boards; M/A-COM has used RF board thicknesses from 0.008 to 0.032 inches without significant change in RF performance. Customer Manufacturing Considerations Most commercial microwave high volume applications use automated soldering techniques. M/A-COM pro- vides guidelines for surface mount board layout, solder selection and screening, and reflow soldering tempera- ture versus time profile in the application note “Surface Mounting Instructions.” Another manufacturing consideration is getting the heat out of the package. With all of the MMIC LNAs, except for the AM50-0001, the typical temperature rise is less than 20˚C even with the higher current optional bias in- stalled. However, care must be taken when using the AM50-0001 not to exceed the 150˚C junction tempera- ture maximum rating; with a thermal resistance of 125˚C/ W and an operating temperature of 85˚C, the maximum power dissipation is 0.5 W . Customer Quality and Reliability There are two main areas of concern for the long term reliability of these MMIC LNAs: heat from exceeding the junction temperature maximum ratings and ESD. Ther- mal effects are relatively straightforward to correct- namely, provide adequate heat sinking. For all the LNAs, except for the AM50-0001, a good RF ground will provide sufficient heat sinking. For the AM50-0001, care must be taken to provide an adequate thermal path, also. ESD is a major issue for customers to take seriously to ensure long term reliability. As stated before, M/A- COM’s GaAs MMIC LNAs low level class 1 EST devices. What this means is that ESD voltage as low as 350 volts can damage the ICs. Remember , static kills; please do as much as possible to eliminate ESD from the manufac- turing floor. MMIC LNA Product Applications M/A-COM’s GaAs MMIC LNAs are intended to be used in the receive chain as the first gain stage of a low noise, high dynamic range receiver. They provide the requisite gain, very low noise figure, high dynamic range, and very low bias current at low cost. While the receive chain applications for the MMIC LNA family are relatively obvi- ous, these MMIC LNAs can provide unique solutions for LO buffering, transmitter driver amplifiers, and a wide variety of applications in addition to those depicted in the data sheet. The following subsections describe a few alternative applications for these MMIC LNAs. MAAM12022 As An LO Buffer Amplifier The MAAM12022 was originally designed as a GPC or JDC receive MMIC LNA. However, if you bias the device at 8 volts on pin 7 (VDD) and 20 mA through the use of an external resistor of approximately 30 ohms from pin 2 to ground, it becomes an excellent LO buffer amplifier. It exhibits 16 dB gain, better tan 40 dB of reverse isolation, and produces +14 dBm of output power at –1 dB gain compression. The noise figure performance remains essentially unchanged. The performance graphs of this amplifier over bias are shown in Figures 11 and 12 for gain and P1dB, respectively. Five other LNAs in this platform share the capability to increase gain and dynamic range through the use of an external resistor from pin 2 to ground and higher bias voltage. The increase in performance for the AM50-0001 is discussed below in a separate subsection. The other two low gain LNAs, the MAAM12032 and MAAM2010, will exhibit performance gains similar to those shown above for the MAAM12022. The two high gain LNAs, MAAM12021 and MAAM12031, will exhibit a gain in- crease of 2 dB and produce better than +14 dBm at -1 dB gain compression when biased at 8 V and 20 mA. |
Podobny numer części - AM50-0001 |
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Podobny opis - AM50-0001 |
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