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FP210L100-22 Arkusz danych(PDF) 1 Page - Siemens Semiconductor Group |
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FP210L100-22 Arkusz danych(HTML) 1 Page - Siemens Semiconductor Group |
1 / 5 page Semiconductor Group 1 07.96 The differential magnetoresistive sensor FP 210 L 100-22 consists of two series coupled L-type InSb/NiSb semiconductor resistors. The resistance value of the MRs, which are mounted onto an insulated ferrite substrate, can be magnetically controlled. The sensor is encapsulated in a plastic package with three in-line contacts extending from the base. The basic resistance of the total system in the unbiased state is 2 ×100 Ω. A permanent magnet which supplies a biasing magnetic field is built into the housing. Type Ordering Code FP 210 L 100-22 Q65210-L100-W4 Differential Magnetoresistive Sensor FP 210 L 100-22 Dimensions in mm Features • High operating temperature • High output voltage • Robust cylindrical housing • Biasing magnet build in • Signal amplitude independent of speed • Easily connectable Typical applications • Detection of speed • Detection of position • Detection of sense of rotation • Angle encoder • Linear position sensing |
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