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SI7703EDN Arkusz danych(PDF) 1 Page - Vishay Siliconix |
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SI7703EDN Arkusz danych(HTML) 1 Page - Vishay Siliconix |
1 / 13 page Vishay Siliconix Si7703EDN Document Number: 71429 S-83043-Rev. C, 22-Dec-08 www.vishay.com 1 Single P-Channel 20-V (D-S) MOSFET With Schottky Diode FEATURES • Halogen-free According to IEC 61249-2-21 Available •TrenchFET® Power MOSFETS: 1.8 V Rated • ESD Protected: 4500 V • Ultra-Low Thermal Resistance, PowerPAK® Package with Low 1.07 mm Profile APPLICATIONS • Charger Switching PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) - 20 0.048 at VGS = - 4.5 V - 6.3 0.068 at VGS = - 2.5 V - 5.3 0.090 at VGS = - 1.8 V - 4.6 SCHOTTKY PRODUCT SUMMARY VKA (V) Vf (V) Diode Forward Voltage IF (A) 20 0.48 V at 0.5 A 1.0 1 2 3 4 5 6 7 8 A A S G K K D D 3.30 mm 3.30 mm Bottom View PowerPAK 1212-8 Ordering Information: Si7703EDN-T1-E3 (Lead (Pb)-free) Si7703EDN-T1-GE3 (Lead (Pb)-free and Halogen-free) K A P-Channel MOSFET S D G 3 k Ω Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage (MOSFET and Schottky) VDS - 20 V Reverse Voltage (Schottky) VKA 20 Gate-Source Voltage (MOSFET) VGS ± 12 ± 12 Continuous Drain Current (TJ = 150 °C) (MOSFET) a TA = 25 °C ID - 6.3 - 4.3 A TA = 85 °C - 4.5 - 3.1 Pulsed Drain Current (MOSFET) IDM - 20 Continuous Source Current (MOSFET Diode Conduction)a IS - 2.3 - 1.1 Average Foward Current (Schottky) IF 1.0 Pulsed Foward Current (Schottky) IFM 7 Maximum Power Dissipation (MOSFET)a TA = 25 °C PD 2.8 1.3 W TA = 85 °C 1.5 0.7 Maximum Power Dissipation (Schottky)a TA = 25 °C 2.0 1.1 TA = 85 °C 1.0 0.6 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendationsb,c 260 |
Podobny numer części - SI7703EDN_08 |
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Podobny opis - SI7703EDN_08 |
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