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MOS FIELD EFFECT TRANSISTOR

N0301P

P-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR SWITCHING

DATA SHEET

Document No.

D20204EJ1V0DS00 (1st edition)

Date Published

January 2010 NS

Printed in Japan

2010

DESCRIPTION

The N0301P is a switching device, which can be driven directly by a 2.5 V

power source.

This N0301P features a low on-state resistance and excellent switching

characteristics, and is suitable for applications such as power switch of

portable machine and so on.

FEATURES

• 2.5 V drive available

• Low on-state resistance

• Built-in gate protection diode

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

PACKING

PACKAGE

N0301P-T1-AT

Pure Sn (Tin)

Tape 3000 p/reel

SOT-23F

Marking: XV

−30

V

m12

V

Drain Current (DC)

m4.0

A

Drain Current (pulse)

Note1

m18

A

Total Power Dissipation

0.2

W

Total Power Dissipation

Note2

1.3

W

Channel Temperature

150

°C

Storage Temperature

−55 to +150

°C

Notes 1. PW

≤ 10

2. Mounted on FR-4 board of 50 mm

× 50 mm × 1.6 mm, copper foil 100%, t ≤ 5 sec.

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this

device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage

may be applied to this device.

PACKAGE DRAWING (Unit: mm)

2.9

±0.1

0.85

±0.05

0.165

±0.05

0 to 0.025

1.9

1

2

3

0.42

±0.05

1: Source

2: Gate

3: Drain

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain