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AM40N20-180P Arkusz danych(PDF) 1 Page - Analog Power |
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AM40N20-180P Arkusz danych(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM40N20-180P N-Channel 200-V (D-S) MOSFET VDS (V) ID(A) Symbol Limit Units VDS 200 VGS ±20 Continuous Drain Current a TA=25°C ID 34 IDM 80 IS 20 A Power Dissipation a TA=25°C PD 300 W TJ, Tstg -55 to 150 °C Symbol Maximum Units RθJA 62.5 RθJC 1 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Maximum Junction-to-Ambient a Maximum Junction-to-Case Gate-Source Voltage PRODUCT SUMMARY 200 rDS(on) (mΩ) 180 @ VGS = 10V 340 @ VGS = 5.5V 34 a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage A Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM40N20-180P_1A |
Podobny numer części - AM40N20-180P |
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