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AM90N10-14P Arkusz danych(PDF) 1 Page - Analog Power

Numer części AM90N10-14P
Szczegółowy opis  N-Channel 100-V (D-S) MOSFET
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Producent  ANALOGPOWER [Analog Power]
Strona internetowa  http://www.analogpowerinc.com/index.html
Logo ANALOGPOWER - Analog Power

AM90N10-14P Arkusz danych(HTML) 1 Page - Analog Power

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AM90N10-14P
Analog Power
PRELIMINARY
Publication Order Number:
DS-AM90N10-14_D
1
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
VDS (V)
rDS(on) m( )
ID (A)
16 @ VGS = 10V
19 @ VGS = 4.5V
PRODUCT SUMMARY
100
90
a
N-Channel 100-V (D-S) MOSFET
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
TO-220 saves board space
Fast switching speed
High performance trench technology
Notes
a.
Package Limited
b.
Pulse width limited by maximum junction temperature
Symbol
Limit
Units
VDS
100
VGS
±20
Continuous Drain Current
a
TC=25
o
C ID
90
IDM
240
IS
90
A
Power Dissipation
a
TC=25
o
C PD
300
W
TJ, Tstg
-55 to 175
o
C
Operating Junction and Storage Temperature Range
Continuous Source Current (Diode Conduction)
a
ABSOLUTE MAXIMUM RATINGS (TA = 25
oC UNLESS OTHERWISE NOTED)
Paramete r
Pulsed Drain Current
b
V
Gate-Source Voltage
Drain-Source Voltage
A
Parameter
Symbol
Maximum Units
MaximumJunction-to-Ambient
a
RθJA
62.5
o
C/W
MaximumJunction-to-Case
RθJC
0.5
o
C/W
THERMALRESISTANCERATINGS
D
1
S
1
G
1
N-Channel MOSFET


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