AM1331P

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM1331_B

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

-1.5

-1.2

PRODUCTSUMMARY

-30

P-Channel 30-V (D-S) MOSFET

•

extends battery life

•

Low thermal impedance copper leadframe

SC70-3 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

D

S

G

Symbol Maximum Units

-30

±20

o

C

-1.5

o

C

-1.2

-2.5

±0.28

A

o

C

0.34

o

C

0.22

o

C

Continuous Source Current (Diode Conduction)

a

Parameter

Pulsed Drain Current

b

V

Gate-Source Voltage

Drain-Source Voltage

Continuous Drain Current

a

A

Power Dissipation

a

Operating Junction and Storage Temperature Range

W

Symbol

Maximum

Units

t <=5 sec

375

Steady-State

430

THERMAL RESISTANCE RATINGS

Parameter

o

C/W

MaximumJunction-to-Ambient

a