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3N50ZL-TF3-T Arkusz danych(PDF) 3 Page - Unisonic Technologies

Numer części 3N50ZL-TF3-T
Szczegółowy opis  3A, 500V N-CHANNEL POWER MOSFET
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Producent  UTC [Unisonic Technologies]
Strona internetowa  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

3N50ZL-TF3-T Arkusz danych(HTML) 3 Page - Unisonic Technologies

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3N50Z
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 6
www.unisonic.com.tw
QW-R502-747.a
ELECTRICAL CHARACTERISTICS(Cont.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=400V, ID=3A
(Note 1, 2)
10
13
nC
Gate to Source Charge
QGS
1.5
nC
Gate to Drain Charge
QGD
5.5
nC
Turn-ON Delay Time
tD(ON)
VDD=250V, ID=3A, RG=25Ω
(Note 1, 2)
10
30
ns
Rise Time
tR
25
60
ns
Turn-OFF Delay Time
tD(OFF)
35
80
ns
Fall-Time
tF
25
60
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
3
A
Maximum Body-Diode Pulsed Current
ISM
12
A
Drain-Source Diode Forward Voltage
VSD
IS=3A, VGS=0V
1.4
V
Body Diode Reverse Recovery Time
trr
IS=3A, VGS=0V,
dIF/dt=100A/µs (Note 1)
170
ns
Body Diode Reverse Recovery Charge
QRR
0.7
µC
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature


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