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ADG5209BRUZ-RL7 Arkusz danych(PDF) 4 Page - Analog Devices |
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ADG5209BRUZ-RL7 Arkusz danych(HTML) 4 Page - Analog Devices |
4 / 24 page ADG5208/ADG5209 Data Sheet Rev. A | Page 4 of 24 Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments CD (On), CS (On) ADG5208 58 pF typ VS = 0 V, f = 1 MHz ADG5209 31 pF typ VS = 0 V, f = 1 MHz POWER REQUIREMENTS VDD = +16.5 V, VSS = −16.5 V IDD 45 µA typ Digital inputs = 0 V or VDD 55 70 µA max ISS 0.001 µA typ Digital inputs = 0 V or VDD 1 µA max VDD/VSS ±9/±22 V min/V max GND = 0 V 1 Guaranteed by design; not subject to production test. ±20 V DUAL SUPPLY VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted. Table 2. Parameter 25°C −40°C to +85°C −40°C to +125°C Unit Test Conditions/Comments ANALOG SWITCH Analog Signal Range VDD to VSS V On Resistance, RON 140 Ω typ VS = ±15 V, IS = −1 mA; see Figure 28 160 200 230 Ω max VDD = +18 V, VSS = −18 V On-Resistance Match Between Channels, ∆RON 3.5 Ω typ VS = ±15 V, IS = −1 mA 8 9 10 Ω max On-Resistance Flatness, RFLAT (ON) 34 Ω typ VS = ±15 V, IS = −1 mA 45 55 60 Ω max LEAKAGE CURRENTS VDD = +22 V, VSS = −22 V Source Off Leakage, IS (Off) ±0.005 nA typ VS = ±15 V, VD = 15 V; see Figure 30 ±0.1 ±0.2 ±0.4 nA max Drain Off Leakage, ID (Off) ±0.005 nA typ VS = ±15 V, VD = 15 V; see Figure 30 ±0.1 ±0.4 ±1.4 nA max Channel On Leakage, ID (On), IS (On) ±0.01 nA typ VS = VD = ±15 V; see Figure 27 ±0.2 ±0.5 ±1.4 nA max DIGITAL INPUTS Input High Voltage, VINH 2.0 V min Input Low Voltage, VINL 0.8 V max Input Current, IINL or IINH 0.002 µA typ VIN = VGND or VDD ±0.1 µA max Digital Input Capacitance, CIN 3 pF typ DYNAMIC CHARACTERISTICS1 Transition Time, tTRANSITION 160 ns typ RL = 300 Ω, CL = 35 pF 195 225 255 ns max VS = 10 V; see Figure 33 tON (EN) 145 ns typ RL = 300 Ω, CL = 35 pF 170 200 225 ns max VS = 10 V; see Figure 35 tOFF (EN) 120 ns typ RL = 300 Ω, CL = 35 pF 140 155 170 ns max VS = 10 V; see Figure 35 Break-Before-Make Time Delay, tD 55 ns typ RL = 300 Ω, CL = 35 pF 30 ns min VS1 = VS2 = 10 V; see Figure 34 Charge Injection, QINJ 0.3 pC typ VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 36 Off Isolation −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 31 Channel-to-Channel Crosstalk −90 dB typ RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 29 |
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