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ADG5209BRUZ-RL7 Arkusz danych(PDF) 4 Page - Analog Devices

Numer części ADG5209BRUZ-RL7
Szczegółowy opis  High Voltage, Latch-Up Proof
Download  24 Pages
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Producent  AD [Analog Devices]
Strona internetowa  http://www.analog.com
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ADG5209BRUZ-RL7 Arkusz danych(HTML) 4 Page - Analog Devices

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ADG5208/ADG5209
Data Sheet
Rev. A | Page 4 of 24
Parameter
25°C
−40°C to +85°C
−40°C to +125°C
Unit
Test Conditions/Comments
CD (On), CS (On)
ADG5208
58
pF typ
VS = 0 V, f = 1 MHz
ADG5209
31
pF typ
VS = 0 V, f = 1 MHz
POWER REQUIREMENTS
VDD = +16.5 V, VSS = −16.5 V
IDD
45
µA typ
Digital inputs = 0 V or VDD
55
70
µA max
ISS
0.001
µA typ
Digital inputs = 0 V or VDD
1
µA max
VDD/VSS
±9/±22
V min/V max
GND = 0 V
1
Guaranteed by design; not subject to production test.
±20 V DUAL SUPPLY
VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
Parameter
25°C
−40°C to +85°C
−40°C to +125°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
VDD to VSS
V
On Resistance, RON
140
Ω typ
VS = ±15 V, IS = −1 mA; see Figure 28
160
200
230
Ω max
VDD = +18 V, VSS = −18 V
On-Resistance Match Between
Channels, ∆RON
3.5
Ω typ
VS = ±15 V, IS = −1 mA
8
9
10
Ω max
On-Resistance Flatness, RFLAT (ON)
34
Ω typ
VS = ±15 V, IS = −1 mA
45
55
60
Ω max
LEAKAGE CURRENTS
VDD = +22 V, VSS = −22 V
Source Off Leakage, IS (Off)
±0.005
nA typ
VS = ±15 V, VD = 15 V; see Figure 30
±0.1
±0.2
±0.4
nA max
Drain Off Leakage, ID (Off)
±0.005
nA typ
VS = ±15 V, VD = 15 V; see Figure 30
±0.1
±0.4
±1.4
nA max
Channel On Leakage, ID (On), IS (On)
±0.01
nA typ
VS = VD = ±15 V; see Figure 27
±0.2
±0.5
±1.4
nA max
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.8
V max
Input Current, IINL or IINH
0.002
µA typ
VIN = VGND or VDD
±0.1
µA max
Digital Input Capacitance, CIN
3
pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, tTRANSITION
160
ns typ
RL = 300 Ω, CL = 35 pF
195
225
255
ns max
VS = 10 V; see Figure 33
tON (EN)
145
ns typ
RL = 300 Ω, CL = 35 pF
170
200
225
ns max
VS = 10 V; see Figure 35
tOFF (EN)
120
ns typ
RL = 300 Ω, CL = 35 pF
140
155
170
ns max
VS = 10 V; see Figure 35
Break-Before-Make Time Delay, tD
55
ns typ
RL = 300 Ω, CL = 35 pF
30
ns min
VS1 = VS2 = 10 V; see Figure 34
Charge Injection, QINJ
0.3
pC typ
VS = 0 V, RS = 0 Ω, CL = 1 nF; see
Figure 36
Off Isolation
−90
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see
Figure 31
Channel-to-Channel Crosstalk
−90
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 29


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