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TPD1E10B09DPYR Arkusz danych(PDF) 2 Page - Texas Instruments |
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TPD1E10B09DPYR Arkusz danych(HTML) 2 Page - Texas Instruments |
2 / 12 page TPD1E10B09 SLLSEB0A – FEBRUARY 2012 – REVISED MARCH 2012 www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ABSOLUTE MAXIMUM RATINGS MIN MAX UNIT Operating temperature range -40 125 °C Storage temperature –65 155 °C IEC 61000-4-2 contact ESD ±20 kV IEC 61000-4-2 air-gap ESD ±20 kV IPP Peak pulse current (tp = 8/20 μs) 4.5 A PPP Peak pulse power (tp = 8/20 μs) 90 W ELECTRICAL CHARACTERISTICS TA = –40ºC to 85ºC unless otherwise specified PARAMETER TEST CONDITION MIN TYP MAX UNIT VRWM Reverse stand-off voltage Pin 1 to 2 or Pin 2 to 1 9 V ILEAK Leakage current Pin 1 = 5 V, Pin 2 = 0 V 100 nA IPP = 1 A, tp = 8/20 μSec (1) 13 Clamp voltage with ESD strike on pin 1, pin 2 VClamp1,2 V grounded. IPP = 5 A, tp = 8/20 μSec (1) 17 IPP = 1 A, tp = 8/20 μSec (1) 13 Clamp voltage with ESD strike on pin 2, pin 1 VClamp2,1 V grounded. IPP = 5 A, tp = 8/20 μSec (1) 20 Pin 1 to Pin 2(2) 0.5 RDYN Dynamic resistance Ω Pin 2 to Pin 1(2) 0.5 CIO IO capacitance VIO = 2.5 V 10 pF VBR1,2 Break-down voltage, pin 1 to pin 2 IIO = 1 mA 9.5 V VBR2,1 Break-down voltage, pin 2 to pin 1 IIO = 1 mA 9.5 V (1) Non-repetitive current pulse 8/20 us exponentially decaying waveform according to IEC61000-4-5 (2) Extraction of RDYN using least squares fit of TLP characteristics between IPP = 10A and IPP = 20A. 2 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Link(s): TPD1E10B09 |
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