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FDC5661N Arkusz danych(PDF) 2 Page - Fairchild Semiconductor |
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FDC5661N Arkusz danych(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page FDC5661N_F085 Rev. A www.fairchildsemi.com 2 MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±20 V ID Drain Current Continuous (VGS = 10V) 4.3 A Pulsed 20 PD Power Dissipation 1.6 W TJ, TSTG Operating and Storage Temperature -55 to +150 oC RθJC Thermal Resistance Junction to Case 30 oC/W RθJA Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area 78 oC/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity .661N FDC5661N_F085 SSOT -6 7” 8mm 3000 units Electrical Characteristics T A = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 60 - - V IDSS Zero Gate Voltage Drain Current VDS = 48V, - - 1 μA VGS = 0V TA = 150oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA1 2.0 3 V rDS(on) Drain to Source On Resistance ID = 4.3A, VGS= 10V - 38 47 m Ω ID = 4A, VGS= 4.5V - 46 60 ID = 4.3A, VGS= 10V TJ = 150oC -69 86 Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1MHz - 763 - pF Coss Output Capacitance - 68 - pF Crss Reverse Transfer Capacitance - 36 - pF RG Gate Resistance f = 1MHz - 2.6 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0 to 10V VDD = 30V ID = 4.3A - 14.5 19 nC Qgs Gate to Source Gate Charge -2.4 - nC Qgd Gate to Drain “Miller“ Charge - 2.9 - nC |
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Podobny opis - FDC5661N |
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