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FDC5661N Arkusz danych(PDF) 2 Page - Fairchild Semiconductor

Numer części FDC5661N
Szczegółowy opis  N-Channel Logic Level PowerTrench짰 MOSFET 60V, 4A, 60m廓
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Producent  FAIRCHILD [Fairchild Semiconductor]
Strona internetowa  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDC5661N Arkusz danych(HTML) 2 Page - Fairchild Semiconductor

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FDC5661N_F085 Rev. A
www.fairchildsemi.com
2
MOSFET Maximum Ratings T
A = 25°C unless otherwise noted
Thermal Characteristics
Symbol
Parameter
Ratings
Units
VDSS
Drain to Source Voltage
60
V
VGS
Gate to Source Voltage
±20
V
ID
Drain Current Continuous (VGS = 10V)
4.3
A
Pulsed
20
PD
Power Dissipation
1.6
W
TJ, TSTG Operating and Storage Temperature
-55 to +150
oC
RθJC
Thermal Resistance Junction to Case
30
oC/W
RθJA
Thermal Resistance Junction to Ambient TO-263, 1in2 copper pad area
78
oC/W
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
.661N
FDC5661N_F085
SSOT
-6
7”
8mm
3000 units
Electrical Characteristics T
A = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V
60
-
-
V
IDSS
Zero Gate Voltage Drain Current
VDS = 48V,
-
-
1
μA
VGS = 0V
TA = 150oC
-
-
250
IGSS
Gate to Source Leakage Current
VGS = ±20V
-
-
±100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA1
2.0
3
V
rDS(on)
Drain to Source On Resistance
ID = 4.3A, VGS= 10V
-
38
47
m
Ω
ID = 4A, VGS= 4.5V
-
46
60
ID = 4.3A, VGS= 10V
TJ = 150oC
-69
86
Ciss
Input Capacitance
VDS = 25V, VGS = 0V,
f = 1MHz
-
763
-
pF
Coss
Output Capacitance
-
68
-
pF
Crss
Reverse Transfer Capacitance
-
36
-
pF
RG
Gate Resistance
f = 1MHz
-
2.6
-
Ω
Qg(TOT)
Total Gate Charge at 10V
VGS = 0 to 10V
VDD = 30V
ID = 4.3A
-
14.5
19
nC
Qgs
Gate to Source Gate Charge
-2.4
-
nC
Qgd
Gate to Drain “Miller“ Charge
-
2.9
-
nC


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