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ADS6122IRHBRG4 Arkusz danych(PDF) 9 Page - Texas Instruments

Numer części ADS6122IRHBRG4
Szczegółowy opis  12-BITS, 125/105/80/65 MSPS ADC WITH DDR LVDS/CMOS OUTPUTS
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Strona internetowa  http://www.ti.com
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ADS6122IRHBRG4 Arkusz danych(HTML) 9 Page - Texas Instruments

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TIMING CHARACTERISTICS – LVDS AND CMOS MODES
(1)
ADS6125, ADS6124
ADS6123, ADS6122
SLAS560A – OCTOBER 2007 – REVISED MARCH 2008
Typical values are at 25
°C, min and max values are across the full temperature range T
MIN = –40°C to TMAX = 85°C, AVDD =
DRVDD = 3.3 V, maximum rated sampling frequency, sine wave input clock, 1.5 VPP clock amplitude, CL = 5 pF
(2), I
O = 3.5
mA, RL = 100 Ω
(3), no internal termination, unless otherwise noted.
For timings at lower sampling frequencies, see section Output Timings in the APPLICATION INFORMATION of this data
sheet.
ADS6125
ADS6124
ADS6123
ADS6122
FS = 125 MSPS
FS = 105 MSPS
FS = 80 MSPS
FS = 65 MSPS
PARAMETER
TEST CONDITIONS
UNIT
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
MIN
TYP
MAX
Aperture
ta
0.7
1.5
2.5
0.7
1.5
2.5
0.7
1.5
2.5
0.7
1.5
2.5
ns
delay
Aperture
tj
150
150
150
150
fs rms
jitter
From global power
15
50
15
50
15
50
15
50
µs
down
Wake-up
time
From standby
15
50
15
50
15
50
15
50
µs
(to valid
From output
CMOS
100
200
100
200
100
200
100
200
ns
data)
buffer
LVDS
200
500
200
500
200
500
200
500
ns
disable
clock
Latency
9
9
9
9
cycles
DDR LVDS MODE(4), DRVDD = 3.3 V
Data valid (6) to
Data setup
tsu
zero-cross of
1.7
2.3
2.5
3.1
3.9
4.5
5.4
6.0
ns
time(5)
CLKOUTP
Zero-cross of
Data hold
th
CLKOUTP to data
0.7
1.7
0.7
1.7
0.7
1.7
0.7
1.7
ns
time(5)
becoming invalid(6)
Input clock rising edge
Clock
zero-cross to output
tPDI
propagation
4.3
5.8
7.3
4.3
5.8
7.3
4.3
5.8
7.3
4.3
5.8
7.3
ns
clock rising edge
delay
zero-cross
Duty cycle of
LVDS bit
differential clock,
clock duty
(CLKOUTP-
40%
47%
55%
40%
47%
55%
40%
47%
55%
40%
47%
55%
cycle
CLKOUTM)
10
≤ Fs ≤ 125 MSPS
Rise time measured
Data rise
from –50 mV to 50 mV
tr
time,
Fall time measured
70
100
170
70
100
170
70
100
170
70
100
170
ps
tf
Data fall
from 50 mV to –50 mV
time
1
≤ Fs ≤ 125 MSPS
Rise time measured
tCLKRI
Output clock
from –50 mV to 50 mV
SE
rise time,
Fall time measured
70
100
170
70
100
170
70
100
170
70
100
170
ps
tCLKFA
Output clock
from 50 mV to –50 mV
LL
fall time
1
≤ Fs ≤ 125 MSPS
PARALLEL CMOS MODE, DRVDD = 2.5 V to 3.3 V, default output buffer drive strength (7)
Data setup
Data valid(8) to 50% of
tsu
2.9
4.4
3.6
5.1
5.1
6.6
6.5
8.0
ns
time(5)
CLKOUT rising edge
50% of CLKOUT
Data hold
th
Rising edge to data
1.3
2.7
2.1
3.5
3.6
5.0
5.1
6.5
ns
time(5)
becoming invalid(8)
Clock
Input clock rising edge
tPDI
propagation
zero-cross to 50% of
5
6.5
7.9
5
6.5
7.9
5
6.5
7.9
5
6.5
7.9
ns
delay
CLKOUT rising edge
(1)
Timing parameters are specified by design and characterization and not tested in production.
(2)
CL is the Effective external single-ended load capacitance between each output pin and ground.
(3)
IO Refers to the LVDS buffer current setting; RL is the differential load resistance between the LVDS output pair.
(4)
Measurements are done with a transmission line of 100
Ω characteristic impedance between the device and the load.
(5)
Setup and hold time specifications take into account the effect of jitter on the output data and clock.
(6)
Data valid refers to logic high of +100 mV and logic low of –100 mV.
(7)
For DRVDD < 2.2V, it is recommended to use external clock for data capture and NOT the device output clock signal (CLKOUT). See
Parallel CMOS interface in application section.
(8)
Data valid refers to logic high of 2V (1.7V) and logic low of 0.8 V (0.7V) for DRVDD = 3.3V (2.5V).
Copyright © 2007–2008, Texas Instruments Incorporated
Submit Documentation Feedback
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Product Folder Link(s): ADS6125, ADS6124 ADS6123, ADS6122


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