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BY4 Arkusz danych(PDF) 1 Page - Shenzhen Taychipst Electronic Co., Ltd

Numer części BY4
Szczegółowy opis  High Voltage Silicon Rectifier Diodes
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Producent  TAYCHIPST [Shenzhen Taychipst Electronic Co., Ltd]
Strona internetowa  http://www.taychipst.com
Logo TAYCHIPST - Shenzhen Taychipst Electronic Co., Ltd

BY4 Arkusz danych(HTML) 1 Page - Shenzhen Taychipst Electronic Co., Ltd

  BY4 Datasheet HTML 1Page - Shenzhen Taychipst Electronic Co., Ltd BY4 Datasheet HTML 2Page - Shenzhen Taychipst Electronic Co., Ltd  
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4000V-16000V
1.0A-0.3A
BY 4 THRU BY 16
Web Site: www.taychipst.com
1 of 2
FEATURES
E-mail: sales@taychipst.com
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
Weight: 1.10 grams
*
High Voltage Silicon Rectifier Diodes
Maximum ratings and Characteristics
Type
Rep. peak reverse volt.
Period. Spitzensperrspg.
VRRM [V]
Surge peak reverse volt.
Stoßspitzensperrspg.
VRSM [V]
Max. forward current
Dauergrenzstrom
IFAV [A] 1)
Forward volt.
Durchlass-Spg.
VF [V] 2)
BY4
4000
4000
1.0
< 4.0
BY6
6000
6000
1.0
< 6.0
BY8
8000
8000
0.5
< 8.0
BY12
12000
12000
0.5
< 10.0
BY16
16000
16000
0.3
< 15.0
Leakage Current
Sperrstrom
Tj = 25°C
Tj = 100°C
V = VRRM
V = VRRM
< 1 µA
< 25 µA
Peak forward surge current, 50 Hz half sine-wave
Stoßstrom für eine 50 Hz Sinus-Halbwelle
TA = 25°C
IFSM
100 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
50 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+150°C
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
thA
< 25 K/W 1)


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