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TYN20X-800T Arkusz danych(PDF) 6 Page - NXP Semiconductors |
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TYN20X-800T Arkusz danych(HTML) 6 Page - NXP Semiconductors |
6 / 12 page NXP Semiconductors TYN20X-800T SCR TYN20X-800T All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 23 July 2012 6 / 12 003aaj935 10-1 10-2 1 10 Zth(j-h) (K/W) 10-3 tp (s) 10-5 1 10 10-1 10-2 10-4 10-3 tp tp T P t T d = (2) (1) (1) with heatsink compound (2) without heatsink compound Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse width 6. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; sinusoidal waveform; clean and dust free ; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C - - 2500 V Cisol isolation capacitance from anode to external heatsink ; f = 1 MHz; Th = 25 °C - 10 - pF 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 7 - 4.5 32 mA IL latching current VD = 12 V; IG = 0.1 A; Tj = 25 °C; Fig. 8 - 21 60 mA IH holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 16 40 mA VT on-state voltage IT = 32 A; Tj = 25 °C; Fig. 10 - 1.2 1.5 V VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 11 - 0.7 1.3 V VGT gate trigger voltage VD = 400 V; IT = 0.1 A; Tj = 150 °C; Fig. 11 0.2 0.4 - V |
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