STP4435A datasheet(3/6 Pages) STANSON

Numer części	STP4435A

Szczegółowy opis	STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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Producent	STANSON [Stanson Technology]

Strona internetowa	http://www.stansontech.com

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STP4435A

P Channel Enhancement Mode MOSFET

-

10A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP4435A 2007. V1

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS=0V,ID=-250uA

-30

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250 uA

-1.0

-3.0

V

Gate Leakage Current

IGSS

VDS=0V,VGS=±20V

±

100 nA

VDS=-30V,VGS=0V

-1

Zero Gate Voltage Drain

Current

IDSS

TJ=55℃

VDS=-30V,VGS=0V

-5

uA

On-State Drain Current

ID(on)

VDS=-5V,VGS=10V

-40

A

Drain-source On-Resistance

RDS(on)

VGS=-10V, ID=-9.2A

VGS=-4.5V, ID=-7.0

0.022

0.030

Ω

Forward Tran Conductance

gfs

VDS=-10V,ID=-9.0A

24

S

Diode Forward Voltage

VSD

IS=-2.0A,VGS=0V

-0.8 -1.2

V

Dynamic

Total Gate Charge

Qg

16

24

Gate-Source Charge

Qgs

2.3

Gate-Drain Charge

Qgd

VDS=-15V,VGS=-10V

ID≣-9.A

4.5

nC

Input Capacitance

Ciss

1650

Output Capacitance

Coss

350

Reverse TransferCapacitance

Crss

VDS =-15V,VGS=0V

f=1MHz

235

pF

16

30

Turn-On Time

td(on)

tr

17

30

65

110

Turn-Off Time

td(off)

tf

VDD=15V,RL=15Ω

ID=-1.0A,VGEN=-10V

RG=6Ω

35

80

nS

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