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TC7USB31FK Arkusz danych(PDF) 4 Page - Toshiba Semiconductor |
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TC7USB31FK Arkusz danych(HTML) 4 Page - Toshiba Semiconductor |
4 / 12 page TC7USB31FK 2009-11-12 4 Electrical Characteristics DC Characteristics (Ta = −40 to 85°C) Characteristics Symbol Test Condition VCC (V) Min Typ. Max Unit “H” level VIH ⎯ 2.3 to 3.6 0.46 × VCC ⎯ ⎯ Input voltage ( OE ) “L” level VIL ⎯ 2.3 to 3.6 ⎯ ⎯ 0.25 × VCC V Input leakage current ( OE ) IIN VIN = 0 to 3.6 V 2.3 to 3.6 ⎯ ⎯ ±1.0 μA Power-off leakage current IOFF VIN = 0 to 3.6 V 0 ⎯ ⎯ ±5.0 μA Off-state leakage current (switch off) ISZ VIS = 0 to VCC, OE = VCC 2.3 to 3.6 ⎯ ⎯ ±5.0 μA VIS = 0 V, IIS = 30 mA (Note 1) 3.0 ⎯ 4.5 9 VIS = 0.4 V, IIS = 30 mA (Note 1) 3.0 ⎯ 5 9.5 ON resistance (Note 2) RON VIS = 3.0 V, IIS = 30 mA (Note 1) 3.0 ⎯ 11 18 Ω Delta RON Δ RON VIS = 0.4 V, 1.0 V, IIS = 30 mA 3.0 ⎯ 0.5 ⎯ Ω On-Resistance Flatness RON(flat) VIN = 0 V to 1.0 V, IIS = 30 mA 3.0 ⎯ 1.2 ⎯ Ω Quiescent supply current ICC VIN = VCC or GND, IOUT = 0 3.6 ⎯ ⎯ 2.0 μA Increase in ICC per input Δ ICC VIN = 1.8 V 3.6 ⎯ ⎯ 10.0 μA Note 1: All typical values are at Ta = 25°C. Note 2: Measured by the voltage drop between D+/D- and HSD+/HSD- pins at the indicated current through the switch. ON resistance is determined by the lower of the voltages on the two pins. |
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Podobny opis - TC7USB31FK |
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