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TC7WH00FU Arkusz danych(PDF) 4 Page - Toshiba Semiconductor

Numer części TC7WH00FU
Szczegółowy opis  Dual 2-Input NAND Gate
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Producent  TOSHIBA [Toshiba Semiconductor]
Strona internetowa  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC7WH00FU Arkusz danych(HTML) 4 Page - Toshiba Semiconductor

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TC7WH00FU/FK
2009-09-24
4
AC Characteristics (unless otherwise specified, Input: tr = tf = 3 ns)
Test condition
Ta = 25°C
Ta =
−40 to
85°C
Characteristic
Symbol
VCC (V)
CL (pF)
Min
Typ.
Max
Min
Max
Unit
15
5.5
7.9
1.0
9.5
3.3
± 0.3
50
8.0
11.4
1.0
13.0
15
3.7
5.5
1.0
6.5
Propagation delay time
tpLH
tpHL
5.0
± 0.5
50
5.2
7.5
1.0
8.5
ns
Input capacitance
CIN
4
10
10
pF
Power dissipation capacitance
CPD
(Note 2)
19
pF
Note 2: CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
ICC (opr.) = CPD・VCC・fIN + ICC/2
Noise Characteristics (Ta = 25°C, input: tr = tf = 3 ns)
Characteristics
Symbol
Test Condition
VCC (V)
Typ.
Limit
Unit
Quiet output maximum dynamic VOL
VOLP
CL = 50 pF
5.0
0.3
0.8
V
Quiet output minimum dynamic VOL
VOLV
CL = 50 pF
5.0
−0.3
−0.8
V
Minimum high level dynamic input voltage
VIHD
CL = 50 pF
5.0
3.5
V
Maximum low level dynamic input voltage
VILD
CL = 50 pF
5.0
1.5
V


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