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STPS6M100DEE Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STPS6M100DEE Arkusz danych(HTML) 3 Page - STMicroelectronics |
3 / 8 page STPS6M100DEE Characteristics Doc ID 023259 Rev 1 3/8 Figure 1. Average forward power dissipation versus average forward current Figure 2. Average forward current versus ambient temperature( = 0.5) PF(AV)(W) 0 1 2 3 4 5 6 01 2 3 4 5678 T δ =tp/T tp IF(AV)(A) δ = 0.05 δ = 0.1 δ = 0.2 δ = 0.5 δ = 1 0 1 2 3 4 5 6 7 0 25 50 75 100 125 150 IF(AV)(A) Tamb(°C) T δ =tp/T tp Rth(j-a)=Rth(j-c) Figure 3. Normalized avalanche power derating versus pulse duration Figure 4. Relative variation of thermal impedance junction to case versus pulse duration P(tp) P (10 µs) ARM ARM 0.001 0.01 0.1 1 1 10 100 1000 t (µs) p Zth(j-c)/Rth(j-c) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Single pulse tp(s) Figure 5. Reverse leakage current versus reverse voltage applied (typical values) Figure 6. Junction capacitance versus reverse voltage applied (typical values) IR(mA) 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 0 10 2030 40506070 8090 100 VR(V) Tj = 150 °C Tj = 125 °C Tj = 100 °C Tj = 75 °C Tj = 50 °C Tj = 25 °C C(pF) 10 100 1000 1 10 100 VR(V) F=1 MHz VOSC=30 mVRMS =25 °C Tj |
Podobny numer części - STPS6M100DEE |
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Podobny opis - STPS6M100DEE |
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